GaP
Gallium phosphidis (GaP) crystallum est materia optica ultrarubra cum duritie superficiei bona, alta conductivity scelerisque et fascia transmissio lata.Ob eximias eius proprietates opticas, mechanicas et thermas comprehensivas, crystallis GaP in re militari et aliis mercaturae summus technicus campus applicari potest.
| Basic Properties | |
| Crystal structure | Zinc Blende |
| Coetus symmetriarum | Td2-F43m |
| Numerus atomorum in 1 cm3 | 4.94·1022 |
| Auger recombinationem coefficientis | 10-30cm6/s |
| Debye temperatus | 445 K |
| Density | 4.14 g cm-3 |
| Dielectric constant (static) | 11.1 |
| Dielectric assidue (princeps frequentia) | 9.11 |
| Effective electronic massaml | 1.12mo |
| Effective electronic massamt | 0.22mo |
| Effective foraminis massaemh | 0.79mo |
| Effective foraminis massaemlp | 0.14mo |
| Electron affinitas | 3.8 eV |
| cancellos constante | 5.4505 A |
| Optical phonon navitas | 0.041 |
| Technical parametri | |
| Crassitudo uniuscuiusque componentis | 0.002 et 3 +/-10%mm |
| propensio | 110 — 110 |
| Superficies qualitas | scr-dig 40-20 — 40-20 |
| idipsum | fluctus ad 633 nm - 1 |
| Parallelismus | arcus min <3 |
