D. Q * P EO: SWITCH PB,


  • 1/4 unda intentione: 33 kv
  • On Page traducitur unda Error: <Unda 1/8
  • ICR: > MM: I
  • detegentem birotulam cursoriam, > MD: I
  • Capacitance: VI pF
  • Damnum limen: > MW D / cm2 @ 1064nm, 10ns
  • Product Detail

    Technical parametri

    Q: SWITCH PB EO transitum per hoc lumen vertitur in statu, ubi copiae variarum factionum collectae per applicatas voltage inducit birefringence mutat electro-opticus per crystal ut D. P *. Cum in conjunction per polarizers: hae cellulae quo modo potest esse optical virgas, panaces aut laser, Q-nuptias instar stimuli est.
    Nos providebit EO Q-Switchs secundum provectus crystal fabricatione atque coating technlogy, non potest offerre varietate laser capillus aequalitatem EO Q switchs exhibens princeps facilioris Transmissus (T> XCVII%), princeps quassatas limine (> 500W / cm2) et magno exstinguere Ratio (> M: I).
    Applications:
    Crack • laser systemata
    Medical • / lasers medicamine
    Versatile R & D • Laser Vestibulum
    & • Military aerospace laser systemata

    Features beneficia
    CCI Quality - oeconomica pretium eximia pretii

    Iactabantur adipe-liber D. P *

    Ratio excelsum antithesis
    Damnum limina princeps
    Humilis voltage fluctus 1/2
    spatium agentibus Specimen pro pacto lasers
    Ceramic foraminum Animantibus quoque mundis et dampnum altus-repugnant
    Ratio excelsum antithesis Eximia hold off-
    Velox electrica connexiones Efficient / institutionem reliable
    Plana ultra-crystalli Optimum trabem propagationem
    Undo intentione 1/4 33 kv
    On Page traducitur unda Error <Unda 1/8
    ICR > MM: I
    detegentem birotulam cursoriam > MD: I
    Capacitance VI pF
    Limen damnum > D MW / cm2 @ 1064nm, 10ns