GSGG Crystal

Compositio:(Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12

Crystal Structure:Cubicus: a = 12.480 Å

M. wDielectric constanteight:968,096

Confluat Point:~1730 oC

Densitas:~ 7.09 g/cm3

Duritia:~ 7.5 ( mohns )

Index refractivus:1.95

Dielectricae constant: 30

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Product Detail

Technical parametri

GGG/SGGG/NGG Garnetes pro liquida epitaxy.SGGG subatratis substratis pro magneto-optica film. In artibus communicationis opticis adhibentur multum utendi 1.3u et 1.5u isolator opticus, nucleus componentis est cinematographicus YIG vel magnus propinquo posita.
Substratum SGGG optimum est carbunculi epitaxialis ferrei crescentis bismuthi substituti membranae, materia bona YIG,BiYIG,GdBIG.
Res physica et mechanica bona et stabilitas chemicae est.
Applicationes:
YIG, BIG epitaxy film;
Proin machinas;
Substitutus GGG

Possessiones:

Compositio	(Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12
Crystal Structure	Cubica: a = 12.480 Å ,
wDielectric constanteight	968,096
Confluat Point	~1730 oC
Densitas	~ 7.09 g/cm3
duritia	~ 7.5 ( mohns )
Refractivus index	1.95
Dielectric constant	30
Damnum dielectric tangens (10 GHz)	ca.3.0 * 10_4
Crystal incrementum methodus	Czochralski
Crystal incrementum directionis	<111>

Parametri technicae:

propensio	<111><100> intra ± 15 arcus min
On Page Distortion undam	<1/4 fluctu@632
Diameter Tolerantia	±0.05mm
Longitudo tolerantia	±0.2mm
Chamfer	0.10mm@45º
idipsum	<1/10 fluctus ad 633nm
Parallelismus	<30 arcus secundis
Perpendicularitas	<15 arcus min
Superficiem Quality	10/5 Scratch/Dig
Patet Apereture	>90%
Magnae dimensiones crystallorum	2.8-76 mm diametro;